Professor Goldman's research interests are in the atomic-scale design of electronic materials with a focus on the mechanisms of strain relaxation, alloy formation, and diffusion, and correlations between microstructure and electronic, magnetic, and optical properties of semiconductor films, nanostructures, and heterostructures. Currently Goldman's group is focusing on the design and fabrication of nanocomposites with precisely tuned physical and chemical structure using focused-ion-beam assisted molecular-beam epitaxy. In addition, her group is developing a new understanding of the influence of nanostructuring on the transport of phonons and charge carriers using scanning probe microscopy based techniques.
Professor Goldman is a professor of MSE who holds joint appointments in Physics and in Electrical Engineering & Computer Science. She has served as Graduate Chair for MSE since 2008 and is Associate Director of the recently awarded Energy Frontiers Research Center at Michigan. Professor Goldman started her academic career at U-M in 1997 as the Dow Corning Assistant Professor. She received the Peter Mark Memorial Award from the American Vacuum Society in 2002 and the Augustus Anson Whitney Fellowship from the Radcliffe Institute in 2005. She has held editorial positions for the Materials Research Society Bulletin, the Journal of Electronic Materials, the Journal of Vacuum Science and Technology, and Thin Solid Films. She has served on the board of directors for AVS and been active in committee leadership and symposium organization for MRS, TMS, and APS. Professor Goldman is also a Fellow of the American Physical Society.
Influence of Alloy Buffer and Capping Layers on InAs/GaAs Quantum Dot Formation, (V.D. Dasika, J.D. Song, W.J. Choi, I.K. Han, J.I. Lee, and R.S. Goldman), Appl. Phys. Lett. 95, 163114 (2009).
Blistering of N-implanted GaAs: Role of Diffusion, (R.R. Collino, B.B. Dick, D. Naab, Y.Q. Wang, M.D. Thouless, and R.S. Goldman), Appl. Phys. Lett. 95, 111912 (2009).
Formation and Coarsening of Ga Droplets on Focused-ion-beam Irradiated GaAs Surfaces, (J. H. Wu, W. Ye, B. L. Cardozo, D. Saltzman, K. Sun, H. Sun, J. F. Mansfield, and R. S. Goldman), Appl. Phys. Lett. 95, 153107 (2009).
Influence of Si-N Pairs on the Electronic Properties of GaAsN Alloys, (Y. Jin, Y. He, H. Cheng, R.M. Jock, T. Dannecker, M. Reason, A.M. Mintairov, Y. Chang, C. Kurdak, J.L. Merz, and R.S. Goldman), Appl. Phys. Lett. 95, 092109 (2009).
Influence of N Interstitials on the Electronic Properties of GaAsN Alloys, (Y. Jin, R.M. Jock, H. Cheng, Y. He, A.M. Mintairov, Y.Q. Wang, C. Kurdak, J.L. Merz, and R.S. Goldman), Appl. Phys. Lett. 95, 062109 (2009).
Nanometer-scale Measurements of Electronic States in InAs/GaAs Quantum Dots, (V. D. Dasika, R.S. Goldman, J.D. Song, W.J. Choi, I.K. Han, J.I. Lee), J. Appl. Phys. 106, 014315 (2009).
Thermoelectric Properties of Quantum Dot Chains, (A. Yadav, K.P. Pipe, W. Ye, and R.S. Goldman), J. Appl. Phys. 105, 093711 (2009).
Probing Unfolded Acoustic Phonons with X-rays, (M. Trigo, Y.M. Sheu, D.A. Arms, J. Chen, S. Ghimire, R. S. Goldman, E. Landahl, R. Merlin, E. Peterson, M. Reason, and D. A. Reis), Phys. Rev. Lett. 101, 022505 (2008).
Thermal Transport in a Semiconductor Heterostructure Measured by Time-Resolved X-ray Diffraction, (Y.M. Sheu, S.H. Lee, J.K. Wahlstrand, D.A. Arms, E.C. Landahl, D.A. Walko, M. Reason, R.S. Goldman, and D.A. Reis), Phys. Rev. B 78, 045317 (2008).