About
Professor Kurdak’s research is mainly in the area of mesoscopic physics. At low temperatures and in small length scales, quantum effects and the discrete nature of charge become increasingly important. Professor Kurdak studies various systems, including ultra small tunnel junctions that are coupled to GaAs/AlGaAs heterostructures, semiconductor quantum dots and quantum point contacts, and systems of Au nanoparticles, where these effects play a key role. Many of the samples used in these experiments are fabricated using standard semiconductor processing techniques including electron beam lithography and they are characterized by low temperature transport measurements at temperatures as low as 20 mK.
Professor Kurdak is an Alfred P. Sloan Research Fellow from the Alfred P. Sloan Foundation.
Selected Publications
Noise Analysis and Optimization of a Charge Transformer, a Noise-Matching Device for Single Electron Transistors, (Ç. Kurdak and K. M. Lewis), Journal of Applied Physics 93, 3364 (2003).
Electric Field Induced Heating and Energy Relaxation in GaN, (T. A. Eckhause, Ö. Süzer, Ç. Kurdak, F. Yun and H. Morkoç), Applied Physics Letters 82, 3035 (2003).
Controlled Fabrication of Electrodes with a Few Nanometer Spacing by Selective Etching of GaAs/AlGaAs Heterostructure, (J. Kim, L. A. Farina, K. M. Lewis, X. Bai, Ç. Kurdak, M. Reason, and R. S. Goldman), Proceedings of 2003 Third IEEE Conference on Nanotechnology, Vol 2, 599, (2003).
Au Nanoparticle Clusters: A New System to Model Hopping Conduction, (Ç. Kurdak, J. Kim, L. A. Farina, K. M. Lewis, X. Bai, M. P. Rowe, and A. J. Matzger), Turkish Journal of Physics 27 419 (2003).
Quantum Well Based Phonon Detectors; Performance Analysis, (X. Bai, Ç. Kurdak, S. Krishna, and P. Bhattacharya), Physica B 316, 362 (2002).
Charge Transformer to Enhance Noise Performance of Single Electron Transistor Amplifiers in High Capacitance Applications, (K. M. Lewis, Ç. Kurdak, S. Krishna, and P. Bhattacharya), Applied Physics Letters 80, 142 (2002).
Electric Field Induced Heating and Energy Relaxation in GaN, (T. A. Eckhause, Ö. Süzer, Ç. Kurdak, F. Yun and H. Morkoç), Materials Research Society Proceedings 693, I11.25.1 (2002).
