Professor Goldman's research interests are in the atomic-scale design of electronic materials with a focus on the mechanisms of strain relaxation, alloy formation and diffusion, and correlations between microstructure and electronic, magnetic, and optical properties of semiconductor films, nanostructures, and heterostructures. Currently, Goldman's group is focusing on the design and fabrication of nanocomposites with precisely tuned physical and chemical structure using focused-ion-beam assisted molecular-beam epitaxy. In addition, her group is developing a new understanding of the influence of nanostructuring on the transport of phonons and charge carriers using scanning probe microscopy-based techniques.
Professor Goldman is a professor of Materials Science and Engineering who holds joint appointments in Physics and in Electrical Engineering & Computer Science. She has served as Graduate Chair of MSE (2008 to 2012), Associate Director of Applied Physics (2010 to present), C-PHOM Education Director (2011 to present), and Member of the College of Engineering Executive Committee (2014-2017).
Professor Goldman began her academic career at U-M in 1997 as the Dow Corning Assistant Professor. She received the Peter Mark Memorial Award from the American Vacuum Society (AVS) in 2002, the Ted Kennedy Family Team Excellence Award from U-M in 2004, the Augustus Anson Whitney Fellowship from the Radcliffe Institute in 2005, and the Monroe-Brown Foundation Service Excellence Award from U-M in 2011. In 2012, Goldman was elected Fellow of both the AVS and American Physical Society. She has held editorial positions for the Bulletin of the Materials Research Society, the Journal of Electronic Materials, the Journal of Vacuum Science and Technology, and Thin Solid Films. Goldman served on the AVS Board of Directors (2005-2008) and as an AVS Trustee (2008-2011); Professor Goldman is active in committee leadership and symposium organization for MRS, TMS, and APS.
Profiling the Local Carrier Concentration Across a Semiconductor Quantum Dot (J.C. Walrath, Y.-H. Lin, S. Huang, and R.S. Goldman), Appl. Phys. Lett. 106, 192101 (2015).
G-Factor Modification in a Bulk InGaAs Epilayer by an In-Plane Electric Field (M. Luengo-Kovac, M. Macmahon, S. Huang, R.S. Goldman, and V. Sih) Phys. Rev. B 91, 201110 (R) (2015).
Influence of Embedded Bismuth Nanocrystals on GaAs Thermoelectric Properties (M.V. Warren, J.C. Canniff, H. Chi, F. Naab, V.A. Stoica, R. Clarke, C. Uher, and R.S. Goldman), J. Appl. Phys. 117, 065101 (2015).
Ordered Horizontal Sb2Te3 Nanowires Induced by Femtosecond Lasers (Y.W. Li, V.A. Stoica, K. Sun, W. Liu, L. Endicott, J.C. Walrath, Y.H. Lin, K.P. Pipe, R.S. Goldman, C. Uher, and R. Clarke), Appl. Phys. Lett. 105, 201904 (2014).
Influence of Sb Incorporation on InGaAs(Sb)N/GaAs Band Alignment (A.S. Chang, E.S. Zech, J. Walrath, T.W. Kim, Yen-Hsiang Lin, L.J. Mawst, and R.S. Goldman), Appl. Phys. Lett. 105, 142105 (2014).
Ga Nanoparticle Enhanced Photoluminescence of GaAs (M. Kang, A.A. Al-Heji, J. Lee, T.W. Saucer, J.H. Wu, L. Zhao, A.L. Katzenstein, D.L. Sofferman, V. Sih, and R.S. Goldman), Appl. Phys. Lett. 103, 101903 (2013).
Influence of Quantum Dot Atomic Structure and Strain Relaxation on GaSb/GaAs Band Offsets (E.S. Zech, A. S. Chang, A.J. Martin, J.C. Canniff, Y.H. Lin, J.M. Millunchick, and R.S. Goldman), Appl. Phys. Lett. 103, 082107 (2013).
Spin Lifetime Measurements in GaAsBi Thin Films (B. Pursley, M. Luengo-Kovac, G. Vardar, R.S. Goldman, and V. Sih), Appl. Phys. Lett. 102, 022420 (2013).
Origins of Persistent Photoconductivity in GaAsN Alloys (R.L. Field III, Y. Jin, T. Dannecker, R.M. Jock, R.S. Goldman, H. Cheng, C. Kurdak, and Y. Wang), Phys. Rev. B 87, 155303 (2013).
Surface Plasmon Resonances of Ga Nanoparticle Arrays (M. Kang, T.W. Saucer, M.V. Warren, J.H. Wu, H. Sun, V. Sih, and R.S. Goldman), Appl. Phys. Lett. 101, 081905 (2012).