Professor Goldman’s research involves developing strategies for manipulating and identifying atoms in novel layered and nanostructured materials using molecular beam epitaxy (MBE), scanning tunneling microscopy (STM), and a variety of in-situ and ex-situ characterization methods. Her group is also using these layered materials and nanostructures to examine the mechanisms of several fundamental processes at the nanoscale, including strain relaxation, alloy formation, and diffusion; and correlations between nanometer-scale structure and electronic, magnetic, and optical properties. Most of her research involves investigations of semiconductor films and nanostructures that are promising for applications ranging from long-wavelength light emitters and high-efficiency solar cells to spin-electronics and spin-optoelectronics. Thus, her research interests involve the following three general areas: (1) Fundamental Phenomena in Semiconductors, (2) Synthesis of Low-Dimensional Semiconductor Structures, and (3) Structure-Property Correlations.

Professor Goldman was the recipient of the 2005 Augustus Anson Whitney Fellowship from the Radcliffe Institute at Harvard University, the 2004 Ted Kennedy Family Team Award from UM CoE, and the 2002 Peter Mark Memorial Award from AVS the Science and Technology Society. She also received a 1998 CAREER Award from the National Science Foundation and a 1994 Graduate Student Award from the Materials Research Society.

Mechanisms of Nitrogen Incorporation in GaAsN Alloys, (M. Reason, H. McKay, W. Ye, S. Hanson, V. Rotberg, and R.S. Goldman), Appl. Phys. Lett. 85, 1692 (2004).

Initiation and Evolution of Phase Separation in Heteroepitaxial InAlAs Films, (B. Shin, A. Lin, K. Lappo, R.S. Goldman, M.C. Hanna, S. Francoeur, A.G. Norman, and A. Mascarenhas), Appl. Phys. Lett. 80, 3292 (2002).

Evolution of Structural and Electronic Properties of Highly Mismatched InSb Films, (X. Weng, R.S. Goldman, D.L. Partin, and J. Heremans), J. Appl. Phys. 88, 6276 (2000).

Interdiffusion and Surface Segregation in Stacked InAs/GaAs Quantum Dots, (B. Lita, R.S. Goldman, J. Phillips, and P.K. Bhattacharya), Appl. Phys. Lett. 75, 2797 (1999).

Nanometer-scale Studies of Vertical Organization and Evolution of Stacked Self-Assembled InAs/GaAs Quantum Dots, (B. Lita, R.S. Goldman, J. Phillips, and P.K. Bhattacharya), Appl. Phys. Lett. 74, 2824 (1999).

Effects of GaAs substrate misorientation on strain relaxation in InxGa1-xAs Films and Multilayers, (R.S. Goldman, K.L. Kavanagh, H.H. Wieder, S.N. Ehrlich, and R.M. Feenstra), J. Appl. Phys. 83, 5137 (1998).

Atomic-scale structure and electronic properties of GaN/GaAs superlattices, (R.S. Goldman, R.M. Feenstra, B.G. Briner, M.L. O'Steen, and R.J. Hauenstein), Appl. Phys. Lett. 69, 3698 (1996).

Correlation of anisotropic strain relaxation with substrate misorientation direction at InGaAs/GaAs interfaces, (R.S. Goldman, H.H. Wieder, and K.L. Kavanagh), Appl. Phys. Lett. 67, 344 (1995).